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Proceedings Paper

The application of EUV lithography for 40nm node DRAM device and beyond
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation lithography technology for the 32 nm half-pitch node and beyond. We have evaluated the Alpha Demo Tool(ADT) characterizing for mixed-andmatched overlay(MMO), flare noise, and resolution limit. For process integration, one of the important things in EUVL is overlay capability. We performed an overlay matching test of a 1.35NA and 193 immersion tool using a low thermal expansion material(LTEM) mask. We also investigated the flare level of the EUV ADT for device applications. The current EUV tool has a higher flare level than ArF lithography tools. We applied a contact layer for 40nm node device integration to reduce the variation in critical dimension(CD) from the flare noise.

Paper Details

Date Published: 17 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727114 (17 March 2009); doi: 10.1117/12.814001
Show Author Affiliations
Joo-on Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chawon Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Doohoon Goo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
InSung Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Changmin Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jeonghoon Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
JinHong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
JeongHo Yeo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Woon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-hoon Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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