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Proceedings Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device
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Paper Abstract

The two key factors in EUV lithography imaging will be flare and shadow effect among other issues. The flare which is similar to the long range density loading effect and also known to be of high level will generate CD variation throughout the exposure field while the EUV specific shadow effect differentiates H-V CDs along the slit. The long range character of flare in EUV full field scanner can even affect CDs in the neighboring fields. It seems to be apparent that the major imaging challenges for EUV lithography to be successfully adopted and applied to device manufacturing will be determined by how smartly and effectively CD variations induced both by flare and shadow effect in the full chip level are compensated. We investigated and assessed the previously proposed full chip level compensation strategies of the flare and shadow effect in EUVL for the application to memory device both by simulation and experiments on the condition of full field scanner. The effectiveness of flare compensation for the case of thin absorber mask was also addressed together with related impact on the shadow induced H-V CD bias.

Paper Details

Date Published: 18 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727142 (18 March 2009); doi: 10.1117/12.813996
Show Author Affiliations
Jeonghoon Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Insung Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Doohoon Goo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Joo-on Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Changmin Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinhong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jeongho Yeo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seongwoon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Woosung Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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