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Proceedings Paper

Fast mask CD uniformity measurement using zero order diffraction from memory array pattern
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Paper Abstract

CD Uniformity (CDU) control is getting more concerning in lithographic process and required to control tighter as design rule shrinkage. Traditionally CDU is measured through discrete spatial sampling based data and interpolated data map represents uniformity trends within shot and wafer. There is growing requirement on more high sampling resolution for the CDU mapping from wafer. However, it requires huge time consumption for CD measurements with traditional methods like CD-SEM and OCD. To overcome the throughput limitation, there was an approach with inspection tool to measure CD trends on array area which showed good correlation to the traditional CD measurement. In this paper, we suggest a fast mask CD error estimation method using 0th order of diffraction. To accomplish fast measurement, simple macro inspection tool was adopted to cover full wafer area and scan result gives good correlation with mask uniformity data.

Paper Details

Date Published: 23 March 2009
PDF: 8 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72721S (23 March 2009); doi: 10.1117/12.813995
Show Author Affiliations
Jinseok Heo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinhong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jeongho Yeo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seongwoon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Woosung Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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