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Proceedings Paper

Resist roughness bi-modality as revealed by two-dimensional FFT 2D analysis
Author(s): Yehiel Gotkis; Leonid Baranov; Theodore H. Fedynyshyn; Susan Cann
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Paper Abstract

LER/LWR performance is currently considered as one of the major stumbling blocks complicating progress in the semiconductor technology. Line edge scans show that low frequency components clearly dominate the LER Power Spectral Density (PSD), thus implying a large characteristic length (>100-500 nm) phenomenon as the major LER source. Most of the theoretical analyses aimed to identify the origin of the LER were focused on the combined effect of exposure and CAR action statistics, and failed to explain the origin of this limit, which resulted in suggestions that there is more than just one phenomenon involved in LER generation. Depth profiling experiments were performed for a broad set of Polymer-PAG-Base combinations. Depth profiling PSD spectra have demonstrated that higher RMS values and correspondingly higher PSD amplitudes are associated with tighter PSD spectrum shifted towards lower frequencies (larger sizes of roughness features), which is very typical for all the cases investigated. The set of the PSD spectra obtained exhibit a pronounced bi-modal structure, indicating that there are at least two clearly noticeable independent roughness-controlling mechanisms.

Paper Details

Date Published: 1 April 2009
PDF: 10 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727345 (1 April 2009); doi: 10.1117/12.813842
Show Author Affiliations
Yehiel Gotkis, KLA-Tencor Corp. (United States)
Leonid Baranov, KLA-Tencor Corp. (United States)
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Susan Cann, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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