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Proceedings Paper

Defect printability of thin absorber mask in EUV lithography
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Paper Abstract

The effect of mask absorber thickness on defect printability in EUV lithography was studied. In case of very thin absorber, when used for EUVL mask, it became necessary to set specifications for mask defects for the manufacturability of ULSI devices because mask absorber thickness could impact defect printability. We prepared programmed mask defects of LR-TaBN absorber with various thicknesses. We then investigated defect printability of thin absorber mask with Small Field Exposure Tool (SFET) by comparing the data with simulation results.

Paper Details

Date Published: 18 March 2009
PDF: 9 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72713I (18 March 2009); doi: 10.1117/12.813653
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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