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Proceedings Paper

Hotspot management for spacer patterning technology with die-to-database wafer inspection system
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Paper Abstract

We have constructed hotspot management flow with a die-to-database (D2DB) inspection system for spacer patterning technologies (SPTs) which are among the strongest candidates in double patterning technologies below 3x nm half-pitch generations. At SPIE 2006[1], we reported in "Hotspot management" that extracted hotspot by full-chip lithography simulation could be quickly fed back to OPC, mask making, etc. Since the SPT includes process complexity from resist patterning to final device patterning, however, it is difficult to exactly estimate hotspots on final patterned features on wafers by full-chip lithography simulation. Therefore, experimental full-chip inspection methodologies for hotspots extraction are necessary in order to construct hotspot management for SPTs. In this work, we applied the D2DB inspection system with electron beam (EB) to SPTs in hotspot management flow. For the D2DB inspection system, the NGR-2100 has remarkable features for the full-chip inspection within reasonable operating time. This system provides accurate hotspot extraction by EB with wider field of view (FOV) than that of SEMs. With the constructed hotspot management flow, extracted hotspots for SPT involving errors of around 10nm could easily be fed back to fix the wafer processes and mask data.

Paper Details

Date Published: 13 March 2009
PDF: 10 pages
Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750V (13 March 2009); doi: 10.1117/12.813648
Show Author Affiliations
Yoshinori Hagio, Toshiba Corp. Semiconductor Co. (Japan)
Ichirota Nagahama, Toshiba Corp. Semiconductor Co. (Japan)
Yasuo Matsuoka, Toshiba Corp. Semiconductor Co. (Japan)
Hidefumi Mukai, Toshiba Corp. Semiconductor Co. (Japan)
Koji Hashimoto, Toshiba Corp. Semiconductor Co. (Japan)


Published in SPIE Proceedings Vol. 7275:
Design for Manufacturability through Design-Process Integration III
Vivek K. Singh; Michael L. Rieger, Editor(s)

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