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Proceedings Paper

Development progress of optics for EUVL at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Masayuki Shiraishi; Hiroshi Chiba; Hideki Komatsuda; Kazushi Nomura; Jin Nishikawa
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Paper Abstract

Full-field EUV exposure tool named EUV1 integrated and exposure experiments were started with the numerical aperture of the projection optics of 0.25 and conventional partial coherent illumination with the coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm line-and-space patterns were resolved. In scanning exposure, 32nm line-and-space patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified depend on the flare evaluation using Kirk test. RET fly's eye mirrors and reflection-type SPF are investigated to increase throughput. High-NA projection optics design is also reviewed.

Paper Details

Date Published: 18 March 2009
PDF: 9 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72711Z (18 March 2009); doi: 10.1117/12.813638
Show Author Affiliations
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Masayuki Shiraishi, Nikon Corp. (Japan)
Hiroshi Chiba, Nikon Corp. (Japan)
Hideki Komatsuda, Nikon Corp. (Japan)
Kazushi Nomura, Nikon Corp. (Japan)
Jin Nishikawa, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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