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Proceedings Paper

Recent progress of EUV full-field exposure tool in Selete
Author(s): Kazuo Tawarayama; Hajime Aoyama; Shunko Magoshi; Yuusuke Tanaka; Seiichiro Shirai; Hiroyuki Tanaka
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Paper Abstract

The Selete full-field EUV exposure tool, the EUV1, was manufactured by Nikon and is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-&-space (L&S) patterns, Selete Standard Resist 03 (SSR3), an NA of 0.25, and conventional illumination (σ = 0.8). The results showed that 25- nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the CD uniformity across a shot to be 3 nm, also 26-nm L&S patterns were resolved. Overlay performance of the EUV1 was showed as processed wafer mark alignment, the repeatability was under 1nm. Overlay accuracy using EGA (Enhanced Global Alignment) was below 4nm at the 3-sigma after liner correction. These results were good enough for an alpha-level lithography tool and test site verification.

Paper Details

Date Published: 18 March 2009
PDF: 7 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 727118 (18 March 2009); doi: 10.1117/12.813627
Show Author Affiliations
Kazuo Tawarayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shunko Magoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichiro Shirai, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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