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Proceedings Paper

Proximity matching for ArF and KrF scanners
Author(s): Young Ki Kim; Lua Pohling; Ng Teng Hwee; Jeong Soo Kim; Peter Benyon; Jerome Depre; Jongkyun Hong; Alexander Serebriakov
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Paper Abstract

There are many IC-manufacturers over the world that use various exposure systems and work with very high requirements in order to establish and maintain stable lithographic processes of 65 nm, 45 nm and below. Once the process is established, manufacturer desires to be able to run it on different tools that are available. This is why the proximity matching plays a key role to maximize tools utilization in terms of productivity for different types of exposure tools. In this paper, we investigate the source of errors that cause optical proximity mismatch and evaluate several approaches for proximity matching of different types of 193 nm and 248 nm scanner systems such as set-get sigma calibration, contrast adjustment, and, finally, tuning imaging parameters by optimization with Manual Scanner Matcher. First, to monitor the proximity mismatch, we collect CD measurement data for the reference tool and for the tool-to-be-matched. Normally, the measurement is performed for a set of line or space through pitch structures. Secondly, by simulation or experiment, we determine the sensitivity of the critical structures with respect to small adjustment of exposure settings such as NA, sigma inner, sigma outer, dose, focus scan range etc. that are called 'proximity tuning knobs'. Then, with the help of special optimization software, we compute the proximity knob adjustment that has to be applied to the tool-to-be-matched to match the reference tool. Finally, we verify successful matching by exposing on the tool-to-be-matched with tuned exposure settings. This procedure is applicable for inter- and intra scanner type matching, but possibly also for process transfers to the design targets. In order to illustrate the approach we show experimental data as well as results of imaging simulations. The set demonstrate successful matching of critical structures for ArF scanners of different tool generations.

Paper Details

Date Published: 23 March 2009
PDF: 11 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723A (23 March 2009); doi: 10.1117/12.813609
Show Author Affiliations
Young Ki Kim, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lua Pohling, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ng Teng Hwee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Jeong Soo Kim, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Peter Benyon, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Jerome Depre, ASML Netherlands B.V. (Netherlands)
Jongkyun Hong, ASML Netherlands B.V. (Netherlands)
Alexander Serebriakov, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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