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Proceedings Paper

The divergence of image and resist process metrics
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Paper Abstract

It is common for computational lithography optimization to be performed using the metrics of the simulated aerial image (AI). Using the AI, the wafer-level CD can be estimated in a number of ways, such as thresholding with or without convolution of the AI with a point-spread function. The assumption of such an approach is that the relationship between the AI CD and the resist CD response is linear. However, the properties of resist reaction-diffusion-development yield a process which is highly non-linear. For example, it is well-known that different photoresists produce a different lithographic response to the same aerial image; isofocality, depth-of-focus, exposure latitude, MEF etc. all vary from one resist to another for the same projection optics and mask. Several publications have demonstrated that a well-calibrated physical resist model can be extrapolated to accurately predict the CD and profile response of the resist process over a wide range of optical and process conditions1-4. In this work, the divergence in performance between resist processes and the projected image-in-the resist is explored through simulation.

Paper Details

Date Published: 16 March 2009
PDF: 8 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727430 (16 March 2009); doi: 10.1117/12.813561
Show Author Affiliations
John J. Biafore, KLA-Tencor (United States)
Sanjay Kapasi, KLA-Tencor (United States)
Stewart A. Robertson, KLA-Tencor (United States)
Mark D. Smith, KLA-Tencor (United States)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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