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Proceedings Paper

A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions
Author(s): E. Pargon; M. Martin; K. Menguelti; L. Azarnouche; J. Foucher; O. Joubert
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Paper Abstract

193nm photoresist pattern printed by optical lithography are known to present significant sidewalls roughness, also called linewidth roughness (LWR) after the lithographic step, that is partially transferred into the underlayers during plasma etching processes. This study is aimed to identify the factors that impact the photoresist pattern sidewalls roughness during plasma exposure. Among them, plasma VUV light (110-210nm) is identified as being the main contributor to LWR decrease during plasma etching processes. Moreover, it was found that the LWR obtained after plasma exposure is strongly dependent on the surface roughening mechanisms taking place at the top of the resist pattern.

Paper Details

Date Published: 23 March 2009
PDF: 13 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720M (23 March 2009); doi: 10.1117/12.813493
Show Author Affiliations
E. Pargon, UJF/INP, LTM-CNRS Grenoble (France)
M. Martin, UJF/INP, LTM-CNRS Grenoble (France)
K. Menguelti, UJF/INP, LTM-CNRS Grenoble (France)
L. Azarnouche, UJF/INP, LTM-CNRS Grenoble (France)
J. Foucher, CEA-LETI Minatec (France)
O. Joubert, UJF/INP, LTM-CNRS Grenoble (France)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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