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Proceedings Paper

Polar Correction: new overlay control method for higher-order intra-field error dependent on the wafer coordinates
Author(s): Manabu Takakuwa; Keigo Toriumi; Nobuhiro Komine; Kazutaka Ishigo; Takuya Kono; Tetsuro Nakasugi; Tatsuhiko Higashiki
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Paper Abstract

A new overlay control method called "Polar Correction" has been developed. In the 3x nm half-pitch generation and beyond, even in the case of using a high-end optical exposure system such as immersion lithography with NA 1.3 over, the overlay accuracy becomes the most critical issue, and the accuracy below 10nm is indispensable [1]. In view of the severe overlay accuracy required, the shot-to-shot intra-field overlay control cannot be disregarded in this generation. In particular, the shot-to-shot intra-field overlay error caused by the influence of evaporation heat has been added in the immersion exposure system. However, it is impossible to correct the shot-to-shot intra-field overlay error by the conventional overlay control method. Therefore, we have developed the new overlay control method called Polar Correction for higher-order intra-field error dependent on the wafer coordinates. In this paper, we explain our new overlay control method for higher-order intra-field error, and show the simulation data and the experimental data. We believe that Polar Correction corresponds to the generation below 10nm overlay accuracy.

Paper Details

Date Published: 23 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720J (23 March 2009); doi: 10.1117/12.813490
Show Author Affiliations
Manabu Takakuwa, Toshiba Corp. (Japan)
Keigo Toriumi, Toshiba Corp. (Japan)
Nobuhiro Komine, Toshiba Corp. (Japan)
Kazutaka Ishigo, Toshiba Corp. (Japan)
Takuya Kono, Toshiba Corp. (Japan)
Tetsuro Nakasugi, Toshiba Corp. (Japan)
Tatsuhiko Higashiki, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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