Share Email Print
cover

Proceedings Paper

Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have developed new positive-tone molecular resist material, C-4-(2-methyl-2-adamantyloxycarbonylmethoxy) phenylcalix[4]resorcinarene (MGR110P). MGR110P showed high solubility in both conventional resist solvents such as propylene glycol monomethyl ether and cyclohexanone. MGR110P was single molecular without molecular weight disperse. A positive-tone molecular resist based on MGR110P was evaluated by EB lithography (EBL) and EUV lithography (EUVL). This resist could be developed a standard alkaline developer of 0.26N TMAHaq. EB patterning results showed the resolution of this resist on a HMDS primed Si wafer to be 40 nm line and space at an EB exposure dose of 28μC/cm2. The line edge roughness (LER) showed 3.8 nm at 50 nm line and space pattern at EB exposure dose of 26μC/cm2. Unfortunately, 30 nm line and space pattern collapsed. In addition, EUV patterning results showed the resolution on an organic layer substrate to be 45 nm line and space at an EUV exposure dose of 10.3 mJ/cm2. Unfortunately, 40 nm to 30 nm line and space pattern collapsed.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732Q (1 April 2009); doi: 10.1117/12.813487
Show Author Affiliations
Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan)
Dai Oguro, Mitsubishi Gas Chemical Co., Inc. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top