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Proceedings Paper

Nikon EUVL development progress update
Author(s): Takaharu Miura; Katsuhiko Murakami; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo
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Paper Abstract

The full-field EUV exposure tool dubbed EUV1 was fully integrated and we started static and scanning exposures with the projection optics NA (Numerical Aperture) of 0.25 and conventional partial illumination with coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm L/S patterns were resolved. In the scanning exposure, 32nm L/S patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified under the flare evaluation using Kirk test. Metal oxide capping layer and oxygen injection method to suppress carbon deposition were developed for the contamination control. Imaging capability with high NA projection optics is also reviewed.

Paper Details

Date Published: 17 March 2009
PDF: 10 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72711X (17 March 2009); doi: 10.1117/12.813384
Show Author Affiliations
Takaharu Miura, Nikon Corp. (Japan)
Katsuhiko Murakami, Nikon Corp. (Japan)
Hidemi Kawai, Nikon Corp. (Japan)
Yoshiaki Kohama, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Yukiharu Ohkubo, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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