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Proceedings Paper

Non-chemically amplified negative resist for EUV lithography
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kanayama; Toshiro Itani
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Paper Abstract

Non-chemically amplified (CA) negative resist for EUV lithography was studied. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl, norbornen, or methacrylate moiety. Dissolution property of the modified-PHS in TMAHaq solution was studied. The degree of the modification of PHS strongly affected the solubility in TMAHaq. Resist was a mixture of modified-PHS, multifunctional thiol compound, and photo-radical generator. Photo-sensitivity of the resist was studied at 254 nm and 13.5 nm. The sensitivity was affected the concentration of thiol compound added. It was found that the present resist system was highly sensitive (5~6 mJ/cm2) to EUV exposure.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731N (1 April 2009); doi: 10.1117/12.813377
Show Author Affiliations
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Koichi Maki, Osaka Prefecture Univ. (Japan)
Haruyuki Okamura, Osaka Prefecture Univ. (Japan)
Koji Kanayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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