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Proceedings Paper

EUV resist outgassing quantification and application
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Paper Abstract

The measurement 'lower limit' and repeatability of EUV resist outgassing analysis using the pressure rise and gas chromatography mass spectrometry (GC-MS) methods are investigated and discussed. Resist outgassing rate and amount measurement results showed a good repeatability with the application of the same method. As for measurement differences between dissimilar analysis methods (pressure rise and GC-MS), a relative difference of around 10 times was obtained. In addition, qualitative analysis performed using the GC-MS showed the need for clean measurement environment (significantly high vacuum conditions) to reduce the effect of background components affecting the measurement quality. Under such measurement conditions, an accurate analysis of the exact source of resist outgassing components was identified. As a result, it was confirmed that resist outgassing of the EUV resist is mostly composed of photo acid generator and protecting group byproducts.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731P (1 April 2009); doi: 10.1117/12.813362
Show Author Affiliations
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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