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Proceedings Paper

Development of EUV resists at Selete
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Paper Abstract

This paper summarizes the development of EUV resists at Semiconductor Leading Edge Technologies (Selete): the benchmarking results of more than 160 EUV resists from resist manufacturers using the small field exposure tool (SFET) and the selection of the Selete standard resists (SSR) for the SFET. We discuss the current status of EUV resist performance compared to the targets for 32-nm half-pitches (hp) concerning resist sensitivity, ultimate resolution, and line-width-roughness (LWR). In addition we show the screening results of new resin materials.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731M (1 April 2009); doi: 10.1117/12.812937
Show Author Affiliations
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Daisuke Kawamura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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