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Proceedings Paper

Sampling strategy: optimization and correction for high-order overlay control for 45nm process node
Author(s): Bo Yun Hsueh; George K. C. Huang; Chun-Chi Yu; Chin-Chou Kevin Huang; Chien-Jen Huang; James R. Manka; David Tien
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Paper Abstract

The tight overlay budgets required for 45nm and beyond make overlay control a very important topic. With the adoption of immersion lithography, the incremental complexity brings much more difficulty to analyzing the source of variation and optimizing the sampling strategy. In this paper, there will be a discussion about how the use of an advanced sampling methodology and strategy can help to overcome this overlay control problem and insure sufficient overlay information to be captured for effective production lot excursion detection as well as rework decision making. There will also be a demonstration of the different correction methodologies to improve overlay control for dual-stage systems in order to maximize the productivity benef its with minimal impact to overlay performance.

Paper Details

Date Published: 24 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727231 (24 March 2009); doi: 10.1117/12.812929
Show Author Affiliations
Bo Yun Hsueh, United Microelectronics Corp. (Taiwan)
George K. C. Huang, United Microelectronics Corp. (Taiwan)
Chun-Chi Yu, United Microelectronics Corp. (Taiwan)
Chin-Chou Kevin Huang, KLA-Tencor Corp. (United States)
Chien-Jen Huang, KLA-Tencor Corp. (United States)
James R. Manka, KLA-Tencor Corp. (United States)
David Tien, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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