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Proceedings Paper

Feasibility study of non-topcoat resist for 22nm node devices
Author(s): Koutaro Sho; Hirokazu Kato; Katsutoshi Kobayashi; Kazunori Iida; Tomoya Ori; Daizo Muto; Tsukasa Azuma; Shinichi Ito; Tomoharu Fujiwara; Yuuki Ishii; Yukio Nishimura; Takanori Kawakami; Motoyuki Shima
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Paper Abstract

Subsequent to 45 nm node, immersion lithography using topcoat process is approaching its next step for mass production. However, microfabrication using immersion topcoat leads to increase in cost due to increase in process steps. In order to deal with this problem, high throughput scanners equipped with a wafer stage which moves at higher speed are under development. Furthermore, as resist process compatible with such high speed scanners, non-topcoat resist is available and seems promising in reducing costs of the resist process. Non-topcoat resist contains hydrophobic additives which are eccentrically located near the film surface. Because non-topcoat resist enables the formation of a more hydrophobic surface, non-topcoat resist process is more suitable for high-speed scanning than topcoat resist process. In the topcoat process, the function of topcoat material and resist material is separated. That is, the resist material and the topcoat material are responsible for lithographic performance and immersion scanning performance, respectively. However, the non-topcoat resist is expected both performances. That is, the non-topcoat resist are required a fine resist profile, small LWR, and low development defects at high speed immersion scanning. In this paper, we report the application of non-topcoat resist in 22 nm node devices. We investigate the influence of hydrophobic additives on imaging performance in several base polymers. Additionally, the influence of chemical species, molecular weight and amount of hydrophobic additive are investigated. Scan performance is also estimated by dynamic receding contact angle using pin scan tool. 22nm node imaging performance is evaluated using Nikon NSRS610C. The surface characteristics and lithographic performance of non-topcoat resist for 22 nm node devices are discussed.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733B (1 April 2009); doi: 10.1117/12.812475
Show Author Affiliations
Koutaro Sho, Toshiba Corp. (Japan)
Hirokazu Kato, Toshiba Corp. (Japan)
Katsutoshi Kobayashi, Toshiba Corp. (Japan)
Kazunori Iida, Toshiba Corp. (Japan)
Tomoya Ori, Toshiba Corp. (Japan)
Daizo Muto, Toshiba Corp. (Japan)
Tsukasa Azuma, Toshiba Corp. (Japan)
Shinichi Ito, Toshiba Corp. (Japan)
Tomoharu Fujiwara, Nikon Corp. (Japan)
Yuuki Ishii, Nikon Corp. (Japan)
Yukio Nishimura, JSR Corp. (Japan)
Takanori Kawakami, JSR Corp. (Japan)
Motoyuki Shima, JSR Corp. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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