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Proceedings Paper

Effect of ambient on electrical and optical properties of GaN
Author(s): M. A. Reshchikov; M. Foussekis; A. A. Baski; H. Morkoç
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Paper Abstract

Photoluminescence (PL) and surface photovoltage (SPV) of GaN layers were studied in vacuum and air ambient. SPV transients were measured with two set-ups: traditional Kelvin probe attached to an optical cryostat and atomic force microscope in contact potential mode. It is found that upward band bending in GaN decreases from its dark value of about 0.9 eV to about 0.3 eV under intense UV light and then gradually increases in air ambient (due to photoadsorption of oxygen) and decreases in vacuum (due to photodesorption of oxygen). Manifestations of such changes were observed as changes in PL intensity and in SPV (both increased in vacuum and decreased in air). The effects were sample-dependent.

Paper Details

Date Published: 16 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721614 (16 February 2009); doi: 10.1117/12.812258
Show Author Affiliations
M. A. Reshchikov, Virginia Commonwealth Univ. (United States)
M. Foussekis, Virginia Commonwealth Univ. (United States)
A. A. Baski, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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