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Proceedings Paper

Fabrication of sub-10-nm pattern using diblock copolymer
Author(s): Naoko Kihara; Kazutaka Takizawa; Hiroyuki Hieda
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Paper Abstract

Fabrication of 16 nm pitch L&S pattern was investigated by applying self-organizing material as etching mask. For the purpose, diblock copolymer template composed of polystyrene-polyethyleneoxide (PS-PEO) and spin-on-glass (SOG) was utilized. The material was prepared to form polystyrene cylinder phase in PEO phase. SOG was located in the PEO phase, because of its hydrophilic property. After spin-coating on a Si wafer, film was baked at high temperature. By the thermal treatment, PS cylinder phase was eliminated to form cavities in the cured SOG matrix. Using the cured Si matrix pattern as etching mask, Si substrate was etched. When baking was carried out at 300° C, bridge-like defects were observed on Si pattern. The thermogravimetric examination indicated the baking at 400° C could reduce the defects. Applying the optimized process, 16nm pitch L&S pattern was transferred on Si substrate.

Paper Details

Date Published: 18 March 2009
PDF: 7 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72712T (18 March 2009); doi: 10.1117/12.812210
Show Author Affiliations
Naoko Kihara, Toshiba Corp. (Japan)
Kazutaka Takizawa, Toshiba Corp. (Japan)
Hiroyuki Hieda, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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