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Proceedings Paper

Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs
Author(s): Tian Lan; Guoqiang Ni
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Paper Abstract

This paper reports the design and preparation of ultra-fast photoconductive (PC) switch made from a 500 nm thick low temperature grown GaAs (LT-GaAs) on a transparent quartz glass substrate. After the procedures of photolithography, etching, evaporation etc., coplanar strip (CPS) transmission lines of Au/Pt with width and spacing of 10 μm and thickness of 600 nm are evaporated on the substrate of LT-GaAs. The photoconductive switch has ideal dark resistance, good I-V performance and photoelectric linearity under an exposure of weak light. The dark current is about 0.1 pA at a bias voltage of 10 V. The typical risetime of the photoconductive switch is 1.3 ps measured by pump-probe technique with a mode-locked Ti: sapphire laser with pulse width of 100 fs, wavelength of 800 nm, and frequency of 100 MHz.

Paper Details

Date Published: 9 February 2009
PDF: 8 pages
Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581K (9 February 2009); doi: 10.1117/12.812075
Show Author Affiliations
Tian Lan, Beijing Institute of Technology (China)
Guoqiang Ni, Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 7158:
2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration
Xuping Zhang; Wojtek J. Bock; Xiaoyi Bao; Ping Shum, Editor(s)

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