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Proceedings Paper

Terahertz metamaterials
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Paper Abstract

In this paper we present our recent developments in terahertz (THz) metamaterials and devices. Planar THz metamaterials and their complementary structures fabricated on suitable substrates have shown electric resonant response, which causes the band-pass or band-stop property in THz transmission and reflection. The operational frequency can be further tuned up to 20% upon photoexcitation of an integrated semiconductor region in the split-ring resonators as the metamaterial elements. On the other hand, the use of semiconductors as metamaterial substrates enables dynamical control of metamaterial resonances through photoexcitation, and reducing the substrate carrier lifetime further enables an ultrafast switching recovery. The metamaterial resonances can also be actively controlled by application of a voltage bias when they are fabricated on semiconductor substrates with appropriate doping concentration and thickness. Using this electrically driven approach, THz modulation depth up to 80% and modulation speed of 2 MHz at room temperature have been demonstrated, which suggests practical THz applications.

Paper Details

Date Published: 6 February 2009
PDF: 13 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721417 (6 February 2009); doi: 10.1117/12.812052
Show Author Affiliations
Hou-Tong Chen, Los Alamos National Lab. (United States)
John F. O'Hara, Los Alamos National Lab. (United States)
Abul K. Azad, Los Alamos National Lab. (United States)
Willie J. Padilla, Boston College (United States)
Richard D. Averitt, Boston Univ. (United States)
Antoinette J. Taylor, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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