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Proceedings Paper

Investigation of semi-insulating gallium arsenide photoconductive photodetectors
Author(s): Xinmei Wang; Wei Shi; Lei Hou; Deming Ma; Guanghui Qu
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Paper Abstract

The structure and working mechanism of a photoconductive photodetector are compared with a p+-i-n+ (PIN) photodiode and a metal-semiconductor-metal (MSM) photodetector which is regarded as two back-to-back Schottky barrier photodiodes. Because a photoconductive photodetector has the features of high critical field strength, especially no junction capacitance and no dead zone, it has the main merits of high signal-noise ratio, ultrafast response and high quantum efficiency. We fabricate two photoconductive photodetectors in a lateral configuration on a semi-insulating (SI) gallium arsenide (GaAs) wafer, which wavelength range of response is from UV to 1.73μm due to two-photon absorption. It is shown by the volt-ampere characteristics curve that the dark leakage current of 30μm-gap SI GaAs photoconductive photodetector at a bias field of 66 V/cm is less than 1.2 μA. Our experiment has demonstrated that SI GaAs photoconductive photodetectors are noteworthily superior to high-speed Si PIN photodetectors to measure ultrashort pulse lasers with the properties of ultrafast response, ultrawide spectral range, high signal-noise ratio and ease of fabrication.

Paper Details

Date Published: 2 February 2009
PDF: 7 pages
Proc. SPIE 7157, 2008 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 71570B (2 February 2009); doi: 10.1117/12.811976
Show Author Affiliations
Xinmei Wang, Xi'an Univ. of Technology (China)
Wei Shi, Xi'an Univ. of Technology (China)
Lei Hou, Xi'an Univ. of Technology (China)
Deming Ma, Xi'an Univ. of Technology (China)
Guanghui Qu, Xi'an Univ. of Technology (China)

Published in SPIE Proceedings Vol. 7157:
2008 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications
Anbo Wang; YanBiao Liao; AiGuo Song; Yukihiro Ishii; Xudong Fan, Editor(s)

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