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Proceedings Paper

Fabrication of position-controlled InN nanocolumns by ECR-MBE
Author(s): T. Araki; D. Fukuoka; H. Tamiya; S. Harui; H. Miyake; K. Hiramatsu; Y. Nanishi
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Paper Abstract

Position controlled InN nanocolumns were fabricated by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) on hole-patterned GaN template by focused ion beam (FIB). Dependences of morphological changes in InN nanocolumn on V/III ratio and hole size were investigated. It is found that growth with a higher V/III ratio and a larger hole size resulted in the multiple formation of InN nanocolumns in one hole. By varying the hole density on the GaN template, we succeeded to change the density of InN nanocolumn by one order of magnitude from about 100/μm2 to 9/μm2. InN nanocolumn showed luminescence with peak energy of 0.74 eV by cathodoluminescence measurement.

Paper Details

Date Published: 16 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160N (16 February 2009); doi: 10.1117/12.811764
Show Author Affiliations
T. Araki, Ritsumeikan Univ. (Japan)
D. Fukuoka, Ritsumeikan Univ. (Japan)
H. Tamiya, Ritsumeikan Univ. (Japan)
S. Harui, Ritsumeikan Univ. (Japan)
H. Miyake, Mie Univ. (Japan)
K. Hiramatsu, Mie Univ. (Japan)
Y. Nanishi, Ritsumeikan Univ. (Japan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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