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Proceedings Paper

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures
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Paper Abstract

The ferroelectric effect has been demonstrated on an AlGaN/GaN heterostructure field effect transistor using a Pb(Zr0.52Ti0.48)O3 layer deposited by radio-frequency magnetron sputtering. The device with a metal-ferroelectric-metal-semiconductor (MFMS) structure was fabricated with a Schottky contact placed between ferroelectric PZT and AlGaN/GaN 2-dimensional electron gas (2DEG) channel. The Schottky contact performs as a bottom electrode of the ferroelectric PZT and also as a barrier layer to prevent interaction at the interface between PZT and GaN. X-ray diffraction revealed the formation of (111)-oriented perovskite phase PZT on gate patterned AlGaN/GaN heterostructures. Transfer characteristics of the double-gate ferroelectric field effect transistor was determined by measuring its source-drain current as the gate bias applied on the top electrode was swept from -15 V to 15 V and then back to -15 V with a voltage step of 0.1 V. Ferroelectric behavior was observed in the plot of source-drain current versus gate voltage that showed a large counterclockwise hysteresis with a 50 % current modulation at zero gate bias.

Paper Details

Date Published: 20 February 2009
PDF: 7 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162M (20 February 2009); doi: 10.1117/12.811671
Show Author Affiliations
Bo Xiao, Virginia Commonwealth Univ. (United States)
Jinqiao Xie, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Qian Fan, Virginia Commonwealth Univ. (United States)
Mo Wu, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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