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Proceedings Paper

Chalcogenide glass thin film resists for grayscale lithography
Author(s): A. Kovalskiy; J. Cech; C. L. Tan; W. R. Heffner; E. Miller; C. M. Waits; M. Dubey; W. Churaman; M. Vlcek; H. Jain
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Paper Abstract

The advantages and applications of chalcogenide glass (ChG) thin film photoresists for grayscale lithography are demonstrated. It is shown that the ChG films can be used to make ultrathin (~600 nm), high-resolution grayscale patterns, which can find their application, for example, in IR optics. Unlike polymer photoresists, the IR transparent ChG patterns can be useful as such on the surface, or be used to transfer the etched pattern into silicon or other substrates. Even if the ChG is used as an etch mask for the silicon substrate, its greater hardness can achieve a greater transfer ratio than that obtained with organic photoresists. The suitability of ChG photoresists is demonstrated with inexpensive and reliable fabrication of ultrathin Fresnel lenses that are transparent in the visible as well as in the IR region. The optical functionality of the Fresnel lenses is confirmed. Application of silver photodissolution in grayscale lithography for MEMS applications is also shown. The process consists of the following steps: ChG film deposition, Ag film deposition, irradiation through a grayscale mask, removal of the excess Ag and the transfer of the pattern to Si by dry etching. A substrate to ChG thickness etching ratio of ~ 10 is obtained for the transfer of patterns into silicon, more than a five fold increase compared to traditional polymer photoresist.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72734A (1 April 2009); doi: 10.1117/12.811646
Show Author Affiliations
A. Kovalskiy, Lehigh Univ. (United States)
J. Cech, Lehigh Univ. (United States)
C. L. Tan, Lehigh Univ. (United States)
W. R. Heffner, Lehigh Univ. (United States)
E. Miller, Lehigh Univ. (United States)
C. M. Waits, Army Research Lab. (United States)
M. Dubey, Army Research Lab. (United States)
W. Churaman, Army Research Lab. (United States)
M. Vlcek, Univ. of Pardubice (Czech Republic)
H. Jain, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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