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Proceedings Paper

Nonlinear THz response of n-type GaAs
Author(s): Michael Woerner; Willhelm Kuehn; Peter Gaal; Klaus Reimann; Thomas Elsaesser; Rudolf Hey
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Paper Abstract

Using a novel high-field THz source we performed various ultrafast experiments on n-type GaAs. Both nonlinear THz experiments driving resonantly the 1S-2P donor impurity transition and nonlinear transport experiments on free carriers in the conduction band of GaAs give new insights into the dynamics of localized and delocalized electrons surprisingly different from the well-known linear Drude theory.

Paper Details

Date Published: 6 February 2009
PDF: 14 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140W (6 February 2009); doi: 10.1117/12.811485
Show Author Affiliations
Michael Woerner, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Willhelm Kuehn, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Peter Gaal, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Klaus Reimann, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Thomas Elsaesser, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Rudolf Hey, Paul-Drude-Institut für Festkörperelektronik (Germany)


Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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