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Proceedings Paper

980nm-1550nm vertically integrated duplexer for hybrid erbium-doped waveguide amplifiers on glass
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Paper Abstract

Ion-exchanged devices on glass have been successfully used to realize passive and active integrated optic devices for sensor and telecom applications. Nowadays, research is focused on the reduction of the chip dimensions with an increase of the number of different function integrated. In this paper we present how the use of two stacked optical layers can allow realizing efficient and compact pump duplexer for ion-exchanged hybrid erbium doped waveguide amplifier. Indeed our complete theoretical study of the device shows that excess losses lower than - 0.1 dB and crosstalk lower than -20 dB can be achieved.

Paper Details

Date Published: 10 February 2009
PDF: 13 pages
Proc. SPIE 7218, Integrated Optics: Devices, Materials, and Technologies XIII, 721805 (10 February 2009); doi: 10.1117/12.811381
Show Author Affiliations
Lydie Onestas, Institut de Microélectronique, Electromagnétisme et Photonique, LaHC, INP Grenoble (France)
Thomas Nappez, Institut de Microélectronique, Electromagnétisme et Photonique, LaHC, INP Grenoble (France)
Elise Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique, LaHC, INP Grenoble (France)
Guy Vitrant, Institut de Microélectronique, Electromagnétisme et Photonique, LaHC, INP Grenoble (France)
Jean-Emmanuel Broquin, Institut de Microélectronique, Electromagnétisme et Photonique, LaHC, INP Grenoble (France)


Published in SPIE Proceedings Vol. 7218:
Integrated Optics: Devices, Materials, and Technologies XIII
Jean-Emmanuel Broquin; Christoph M. Greiner, Editor(s)

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