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Proceedings Paper

Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode
Author(s): Jheng-Tai Yan; Chun-Yen Tseng; Chia-Hsun Chen; Ching-Ting Lee
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Paper Abstract

The Pt/Ga2O3/GaN diodes were fabricated in which the Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical method. Then, the Ga2O3 oxide films were annealed in O2 ambiance at 700 °C for 2 hours to perform the β-Ga2O3 crystalline phases. The hydrogen sensing characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/β-Ga2O3/GaN (metal-insulator-semiconductor, MIS) diodes under hydrogen-containing ambiance were studied in an air atmosphere. Compared with the MS devices, the MIS devices exhibited better hydrogen sensing ability. The result demonstrates that the β-Ga2O3 layer plays an important role in the hydrogen sensing of the GaN based MIS diodes.

Paper Details

Date Published: 18 February 2009
PDF: 7 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721612 (18 February 2009); doi: 10.1117/12.811004
Show Author Affiliations
Jheng-Tai Yan, National Cheng Kung Univ. (Taiwan)
Chun-Yen Tseng, National Cheng Kung Univ. (Taiwan)
Chia-Hsun Chen, National Cheng Kung Univ. (Taiwan)
Ching-Ting Lee, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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