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Proceedings Paper

Potential of semiconductor nanowires for single photon sources
Author(s): Jean-Christophe Harmand; Linsheng Liu; Gilles Patriarche; Maria Tchernycheva; Nikolai Akopian; Umberto Perinetti; Valery Zwiller
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Paper Abstract

The catalyst-assisted growth of semiconductor nanowires heterostructures offers a very flexible way to design and fabricate single photon emitters. The nanowires can be positioned by organizing the catalyst prior to growth. Single quantum dots can be formed in the core of single nanowires which can then be easily isolated and addressed to generate single photons. Diameter and height of the dots can be controlled and their emission wavelength can be tuned at the optical telecommunication wavelengths by the material composition. The final morphology of a wire can be shaped by the radial/axial growth ratio, offering the possibility to form single mode optical waveguides with a tapered end for efficient photon collection.

Paper Details

Date Published: 26 January 2009
PDF: 10 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722219 (26 January 2009); doi: 10.1117/12.810929
Show Author Affiliations
Jean-Christophe Harmand, Lab. de Photonique et de Nanostructures, CNRS (France)
Linsheng Liu, Lab. de Photonique et de Nanostructures, CNRS (France)
Gilles Patriarche, Lab. de Photonique et de Nanostructures, CNRS (France)
Maria Tchernycheva, Lab. de Photonique et de Nanostructures, CNRS (France)
Nikolai Akopian, Kavli Institute of Nanoscience, Delft Univ. of Technology (Netherlands)
Umberto Perinetti, Kavli Institute of Nanoscience, Delft Univ. of Technology (Netherlands)
Valery Zwiller, Kavli Institute of Nanoscience, Delft Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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