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Proceedings Paper

Ultraviolet laser diodes on sapphire and AlN substrates
Author(s): Michael Kneissl; Zhihong Yang; Mark Teepe; Noble M. Johnson
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Paper Abstract

The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm2 for lasers emitting near 330 nm.

Paper Details

Date Published: 3 February 2009
PDF: 7 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300E (3 February 2009); doi: 10.1117/12.810926
Show Author Affiliations
Michael Kneissl, Palo Alto Research Center, Inc. (United States)
Zhihong Yang, Palo Alto Research Center, Inc. (United States)
Mark Teepe, Palo Alto Research Center, Inc. (United States)
Noble M. Johnson, Palo Alto Research Center, Inc. (United States)


Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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