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Proceedings Paper

Free carrier lifetime modification in silicon
Author(s): N. M. Wright; D. J. Thomson; K. L. Litvinenko; W. R. Headley; A. J. Smith; A. P. Knights; J. H. B. Deane; F. Y. Gardes; G. Z. Mashanovich; R. Gwilliam; G. T. Reed
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Paper Abstract

We investigate the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers, an undesired effect of the Raman process in crystalline silicon. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted silicon ions can be kept low if irradiation energy and dose are correctly chosen. Simulations of Raman amplification in silicon rib waveguides suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to sweep out the photo-generated free carriers.

Paper Details

Date Published: 17 February 2009
PDF: 8 pages
Proc. SPIE 7220, Silicon Photonics IV, 722006 (17 February 2009); doi: 10.1117/12.810907
Show Author Affiliations
N. M. Wright, Univ. of Surrey (United Kingdom)
D. J. Thomson, Univ. of Surrey (United Kingdom)
K. L. Litvinenko, Univ. of Surrey (United Kingdom)
W. R. Headley, Univ. of Surrey (United Kingdom)
A. J. Smith, Univ. of Surrey (United Kingdom)
A. P. Knights, McMaster Univ. (Canada)
J. H. B. Deane, Univ. of Surrey (United Kingdom)
F. Y. Gardes, Univ. of Surrey (United Kingdom)
G. Z. Mashanovich, Univ. of Surrey (United Kingdom)
R. Gwilliam, Univ. of Surrey (United Kingdom)
G. T. Reed, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 7220:
Silicon Photonics IV
Joel A. Kubby; Graham T. Reed, Editor(s)

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