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Proceedings Paper

THz emission from coherent plasmons in InAs nanowires
Author(s): D. V. Seletskiy; M. P. Hasselbeck; M. Sheik-Bahae; J. G. Cederberg; A. A. Talin
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Paper Abstract

We report the first observation of coherent plasmon emission of THz radiation from arrays of semiconductor nanowires. The THz signal strength from InAs nanowires is comparable to a planar substrate, indicating the nanowires are highly efficient emitters. This is explained by the preferential orientation of plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. Using a bulk Drude model, we identify the average donor density and mobility in the nanowires in a non-contact manner. Contact IV transconductance measurements provide order of magnitude agreement with values obtained from the THz spectra.

Paper Details

Date Published: 7 February 2009
PDF: 6 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140Y (7 February 2009); doi: 10.1117/12.810875
Show Author Affiliations
D. V. Seletskiy, The Univ. of New Mexico (United States)
M. P. Hasselbeck, The Univ. of New Mexico (United States)
M. Sheik-Bahae, The Univ. of New Mexico (United States)
J. G. Cederberg, Sandia National Labs. (United States)
A. A. Talin, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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