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Proceedings Paper

Growth and defect analysis of m-plane GaN-based layers on (100) LiAlO2 grown by MOVPE
Author(s): Mitch M. C. Chou; D. R. Hang; Liuwen Chang; Michael Heuken
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Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160K; doi: 10.1117/12.810704
Show Author Affiliations
Mitch M. C. Chou, National Sun Yat-Sen Univ. (Taiwan)
D. R. Hang, National Sun Yat-Sen Univ. (Taiwan)
Liuwen Chang, National Sun Yat-Sen Univ. (Taiwan)
Michael Heuken, RWTH Aachen (Germany)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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