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Proceedings Paper

Dielectric performance of diamond-like carbon nanofilms deposited by electron-beam-induced deposition
Author(s): Eugeniu Balaur; Andrew G. Peele
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Paper Abstract

The effect of electron beam dose and low accelerating voltage on diamond-like-carbon (DLC) deposition rate and the resulting current-voltage characteristics in thin metal/DLC/semiconductor junctions was studied. We show that thicker DLC films can be obtained using lower accelerating voltages (2 kV) than when using higher accelerating voltage (20 kV). However, under the conditions used the insulating performance of the thicker films is worse than the thinner films. We attribute this effect to the variation of tunnelling barrier height in DLC deposited using different accelerating voltages. DLC films with a tunnelling barrier height of up to 3.12 eV were obtained using a 20 kV electron-beam, while only 0.73 eV was achieved for 2 kV DLC films.

Paper Details

Date Published: 30 December 2008
PDF: 9 pages
Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 72690K (30 December 2008); doi: 10.1117/12.810690
Show Author Affiliations
Eugeniu Balaur, La Trobe Univ. (Australia)
Andrew G. Peele, La Trobe Univ. (Australia)

Published in SPIE Proceedings Vol. 7269:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV
Jung-Chih Chiao; Alex J. Hariz; David V. Thiel; Changyi Yang, Editor(s)

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