Share Email Print
cover

Proceedings Paper

Growth and luminescence properties of one-dimensional InN and InGaN nanostructures
Author(s): Li-Chyong Chen; Abhijit Ganguly; Chih-Wei Hsu; Ming-Shien Hu; Szu-Ping Fu; Yang-Fang Chen; Kuei-Hsien Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Growth and luminescence properties of InN nanobelts (InNNBs) and InGaN nanowires (NWs) by MOCVD and thermal CVD will be presented, along with their relation and difference to thin film counterparts. While there is a growing acceptance of the low band gap (0.6-0.7 eV) of InN, the optical properties of the actual samples still suffered, presumably due to the difficulty in obtaining high-quality samples and/or controlling their defect and carrier concentrations. However, the free-standing nanobelts can be nearly defect-free, allowing an excellent opportunity for fundamental investigations on unique dimensionality. InNNBs show photoluminescence (PL) in IR with peak width of 14 meV, the sharpest reported to date for InN. Interestingly, with increasing excitation intensity, InNNBs reveal an anomalously large blueshift in PL, compared to thin films; along with a decrease in the phonon frequencies as evident by Raman measurements. Surface band bending, converse piezoelectric effect, and photoelastic effects are employed to explain these behaviors. As for InGaN NWs, both In-rich and Ga-rich ternary nanowires have been synthesized by simply varying growth temperature. Morphological and structural characterizations reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming self assembled quantum dots (SAQDs) embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich nanowires, which has been explained by proposing a multi-level band schema.

Paper Details

Date Published: 3 February 2009
PDF: 14 pages
Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 723112 (3 February 2009); doi: 10.1117/12.810438
Show Author Affiliations
Li-Chyong Chen, National Taiwan Univ. (Taiwan)
Abhijit Ganguly, National Taiwan Univ. (Taiwan)
Chih-Wei Hsu, Institute of Atomic and Molecular Sciences (Taiwan)
Ming-Shien Hu, Institute of Atomic and Molecular Sciences (Taiwan)
Szu-Ping Fu, National Taiwan Univ. (Taiwan)
Yang-Fang Chen, National Taiwan Univ. (Taiwan)
Kuei-Hsien Chen, National Taiwan Univ. (Taiwan)
Institute of Atomic and Molecular Sciences (Taiwan)


Published in SPIE Proceedings Vol. 7231:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu, Editor(s)

© SPIE. Terms of Use
Back to Top