Share Email Print

Proceedings Paper

Fabrication of a gas flow device consisting of micro-jet pump and flow sensor
Author(s): Katsuhiko Tanaka; Van Thanh Dau; Tomonori Otake; Thien Xuan Dinh; Susumu Sugiyama
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A gas-flow device consisting of a valveless micro jet pump and flow sensor has been designed and fabricated using a Si micromachining process. The valveless micro pump is composed of a piezoelectric lead zirconate titanate (PZT) diaphragm actuator and flow channels. The design of the valvless pump focuses on a crosss junction formed by the neck of the pump chamber and one outlet and two opposite inlet channnels. The structure allows differences in the fluidic resistance and fluidic momentum inside the channels during each pump vibration cycle, which leads to the gas flow being rectified without valves. Before the Si micro-pump was developed, a prototype of it was fabricated using polymethyl methacrylate (PMMA) and a conventional machining techinique, and experiments on it confirmed the working principles underlying the pump. The Si micro-pump was designed and fabricated based on these working principles. The Si pump was composed of a Si flow channel plate and top and botom covers of PMMA. The flow channels were easily fabricated by using a silicon etching process. To investigate the effects of the step nozzle structure on the gas flow rate, two types of pumps with different channel depths (2D- and 3D-nozzle structures) were designed, and flow simulations were done using ANSYS-Fluent software. The simulations and excperimental data revealed that the 3D-nozzle structure is more advantageous than the 2D-nozzle structure. A flow rate of 4.3 ml/min was obtained for the pump with 3D-nozzle structure when the pump was driven at a resonant frequency of 7.9 kHz by a sinusoidal voltage of 40Vpp. A hot wire was fabricated as a gas-flow sensor near the outlet port on the Si wafer.

Paper Details

Date Published: 30 December 2008
PDF: 9 pages
Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 726816 (30 December 2008); doi: 10.1117/12.810229
Show Author Affiliations
Katsuhiko Tanaka, Ritsumeikan Univ. (Japan)
Van Thanh Dau, Ritsumeikan Univ. (Japan)
Tomonori Otake, Ritsumeikan Univ. (Japan)
Thien Xuan Dinh, Ritsumeikan Univ. (Japan)
Susumu Sugiyama, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 7268:
Smart Structures, Devices, and Systems IV
Said Fares Al-Sarawi; Vijay K. Varadan; Neil Weste; Kourosh Kalantar-Zadeh, Editor(s)

© SPIE. Terms of Use
Back to Top