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Proceedings Paper

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures
Author(s): Yung-Ling Lan; Hung-Cheng Lin; Hsueh-Hsing Liu; Geng-Yen Lee; Fan Ren; Stephen J. Pearton; Mao-Nan Chang; Jen-Inn Chyi
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Paper Abstract

We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (ρc) of 1.1×10-6 ohm-cm2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.

Paper Details

Date Published: 16 February 2009
PDF: 5 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162P (16 February 2009); doi: 10.1117/12.810165
Show Author Affiliations
Yung-Ling Lan, National Central Univ. (Taiwan)
Hung-Cheng Lin, National Central Univ. (Taiwan)
Hsueh-Hsing Liu, National Central Univ. (Taiwan)
Geng-Yen Lee, National Central Univ. (Taiwan)
Fan Ren, Univ. of Florida (United States)
Stephen J. Pearton, Univ. of Florida (United States)
Mao-Nan Chang, National Nano Device Labs. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Academia Sinica (Taiwan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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