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Proceedings Paper

Morphological change in tip based nano-patterned planar InAs
Author(s): K. G. Eyink; L. Grazulis; K. Mahalingam; J. R. Shoaf
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Paper Abstract

The unique properties of quantum dots should allow enhanced or novel devices to be fabricated. However, the typical method of formation is to self-assemble quantum dots. This process causes quantum dots to have a distribution in properties such as size and to form at near random location. Since many of these possible devices require near exact positioning of the quantum dots with given sizes, most of these potential devices have been unrealized or exist in far from optimum conditions. In this work, we present a new method which is being examined for its potential to form uniform quantum dot structures. This technique is surface tension driven restructuring of a nano-patterned surface. In particular, we have formed a planar 5nm thick InAs film under metal rich conditions. The sample pattern was formed using a 3mg load measured with a Hysitron nano-indentor and maintained using STM scan electronics. The pattern consisted of a grid of 150 lines in x and y directions in nominal 9μm x 9μm square area. AFM analysis showed a series of lines which are spaced ~180 nm lines apart in the y direction and lines spaced ~60 nm and 120 nm in the x-direction. The patterned sample was annealed under a high As flux, near 5 x 10-6 torr, after removal of the surface oxides. The resulting structure clearly shows the reorganization of the InAs in regions defined by the original patterning in AFM images. AFM analysis indicates large features with 80nm base width were formed.

Paper Details

Date Published: 13 February 2009
PDF: 6 pages
Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 722408 (13 February 2009); doi: 10.1117/12.810160
Show Author Affiliations
K. G. Eyink, Air Force Research Lab. (United States)
L. Grazulis, Univ. of Dayton Research Institute (United States)
K. Mahalingam, Universal Technology Corporation (United States)
J. R. Shoaf, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 7224:
Quantum Dots, Particles, and Nanoclusters VI
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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