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Proceedings Paper

High-power IR laser in SMT package
Author(s): Benedikt Pritsch; Martin Behringer; Markus Arzberger; Christoph Wiesner; Robin Fehse; Jörg Heerlein; Josip Maric; Wojciech Giziewicz
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Paper Abstract

Laser dies in an optical power range of 1-3 Watts are widely assembled in popular TO- packages. TO-packages suffer from high thermal resistance and limited output power. Bad thermal contact between circuit boards and TO-devices can cause overheating of laser chips, significantly reducing the operating life time. We developed a compact high heat-load SMT package for an optical power up to 7 Watts in CW operation with good life time results. The new package for high power laser chips combines highly efficient heat dissipation with Surface-mount technology. A Direct-Bonded-Copper (DBC) substrate acts as a base plate for the laser chip and heat sink. The attached frame is used for electrical contacting and acts as beam reflector where the laser light is reflected at a 45° mirror. In the application the DBC base plate of the SMT-Laser is directly soldered to a Metal-Core-PCB by reflow soldering. The overall thermal resistance from laser chip to the bottom of a MC-PCB was measured as low as 2.5 K/W. The device placement process can be operated by modern high-speed mounting equipment. The direct link between device and MC-PCB allows CW laser operation up to 6-7 watts at wavelengths of 808nm to 940nm without facing any overheating symptom like thermal roll over. The device is suitable for CW and QCW operation. In pulsed operation short rise and fall times of <2ns have been demonstrated. New application fields like infrared illumination for sensing purposes in the automotive industry and 3D imaging systems could be opened by this new technology.

Paper Details

Date Published: 23 February 2009
PDF: 9 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71980F (23 February 2009); doi: 10.1117/12.810143
Show Author Affiliations
Benedikt Pritsch, OSRAM Opto Semiconductors GmbH (Germany)
Martin Behringer, OSRAM Opto Semiconductors GmbH (Germany)
Markus Arzberger, OSRAM Opto Semiconductors GmbH (Germany)
Christoph Wiesner, OSRAM Opto Semiconductors GmbH (Germany)
Robin Fehse, OSRAM Opto Semiconductors GmbH (Germany)
Jörg Heerlein, OSRAM Opto Semiconductors GmbH (Germany)
Josip Maric, OSRAM Opto Semiconductors GmbH (Germany)
Wojciech Giziewicz, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

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