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Proceedings Paper

Self-assembled InGaAs/GaAs quantum dot microtube coherent light sources on GaAs and silicon
Author(s): Z. Mi; S. Vicknesh; F. Li; P. Bhattacharya
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Paper Abstract

We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtubebased coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlled release from the substrate. Tailoring of the optical modes is achieved by engineering the shape of the microtube ring resonators. Using substrate-to-substrate transfer method, we have also achieved, for the first time, three-dimensionally confined quantum dot microtube optical ring resonators on Si, that are relatively free of dislocations. Sharp polarized and regularly spaced optical modes, with an intrinsic Q-factor of ~ 3,000, were measured at 77 K.

Paper Details

Date Published: 17 February 2009
PDF: 9 pages
Proc. SPIE 7220, Silicon Photonics IV, 72200S (17 February 2009); doi: 10.1117/12.810117
Show Author Affiliations
Z. Mi, McGill Univ. (Canada)
S. Vicknesh, McGill Univ. (Canada)
F. Li, McGill Univ. (Canada)
P. Bhattacharya, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 7220:
Silicon Photonics IV
Joel A. Kubby; Graham T. Reed, Editor(s)

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