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Proceedings Paper

High-power semiconductor lasers for applications requiring GHz linewidth source
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Paper Abstract

In this paper we present the development of semiconductor laser systems with output powers reaching 100 W and linewidths down to 10 GHz. The combination of high power and narrow emission spectrum was achieved through external resonator configurations based on volume Bragg gratings. By using Bragg gratings with extremely narrow spectral selectivity we were able to narrower and lock emission spectra of diode lasers, with precise wavelength tuning achieved by thermal control of the volume grating. The thermal coefficient of our volume gratings was approximately 8 pm/K, which was low enough to guarantee stable frequency operating regime. We implemented successfully two such schemes for lasers generating at 780 nm and 1.55 μm as pumping sources for Rb vapor and Er-doped solid state lasers, correspondingly.

Paper Details

Date Published: 24 February 2009
PDF: 5 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981N (24 February 2009); doi: 10.1117/12.810058
Show Author Affiliations
Ivan Divliansky, The College of Optics and Photonics, Univ. of Central Florida (United States)
Vadim Smirnov, OptiGrate (United States)
George Venus, The College of Optics and Photonics, Univ. of Central Florida (United States)
Alex Gourevitch, The College of Optics and Photonics, Univ. of Central Florida (United States)
Leonid Glebov, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

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