Share Email Print
cover

Proceedings Paper

The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - π - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 μm.

Paper Details

Date Published: 26 January 2009
PDF: 12 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722215 (26 January 2009); doi: 10.1117/12.810033
Show Author Affiliations
Darin Hoffman, Northwestern Univ. (United States)
Binh-Minh Nguyen, Northwestern Univ. (United States)
Edward Kwei-wei Huang, Northwestern Univ. (United States)
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Simeon Bogdanov, Northwestern Univ. (United States)
Paritosh Manurkar, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Vaidya Nathan, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top