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Proceedings Paper

Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
Author(s): Pierre-Yves Delaunay; Binh Minh Nguyen; Darin Hoffman; Edward Kwei-wei Huang; Paritosh Manurkar; Simeon Bogdanov; Manijeh Razeghi
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Paper Abstract

Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an Mstructure barrier between the n-type contact and the π active region reduced the tunneling component of the dark current. The M-structure design improved the noise performance and the dynamic range of FPAs at low temperatures. At 81K, the NEDT of the focal plane array was 23 mK. The noise of the camera was dominated by the noise component due to the read out integrated circuit. At 8 μm, the median quantum efficiency of the detectors was 71%, mainly limited by the reflections on the backside of the array.

Paper Details

Date Published: 26 January 2009
PDF: 10 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220W (26 January 2009); doi: 10.1117/12.810032
Show Author Affiliations
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Binh Minh Nguyen, Northwestern Univ. (United States)
Darin Hoffman, Northwestern Univ. (United States)
Edward Kwei-wei Huang, Northwestern Univ. (United States)
Paritosh Manurkar, Northwestern Univ. (United States)
Simeon Bogdanov, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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