Share Email Print
cover

Proceedings Paper

Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors
Author(s): J. Wang; I. Cotoros; D. S. Chemla; X. Liu; J. K. Furdyna; J. Chovan; I. E. Perakis
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

Paper Details

Date Published: 7 February 2009
PDF: 7 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721412 (7 February 2009); doi: 10.1117/12.809945
Show Author Affiliations
J. Wang, Iowa State Univ. (United States)
I. Cotoros, Lawrence Berkeley National Lab., Univ. of California, Berkeley (United States)
D. S. Chemla, Lawrence Berkeley National Lab., Univ. of California, Berkeley (United States)
X. Liu, Univ. of Notre Dame (United States)
J. K. Furdyna, Univ. of Notre Dame (United States)
J. Chovan, Univ. of Crete (Greece)
I. E. Perakis, Univ. of Crete (Greece)


Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

© SPIE. Terms of Use
Back to Top