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Proceedings Paper

Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes
Author(s): R. Pillai; D. Starikov; C. Boney; A. Bensaoula
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Paper Abstract

Employment of layered structures made of semiconductor materials with different optical absorption bands is a new way of realizing either broad band spectrum or selective multiple band photodetectors. A new concept of structures fabricated using stacked semiconducting layers to obtain a multi band spectral response is reported. Based on this approach, fabrication of a Solar-blind dual-band UV/IR photodetectors is demonstrated. Optimization of the device was carried out by modeling of the electric field distribution and developing tunneling barriers. The optimized Solar-blind UV/IR photodiode UV spectral response turns-on approximately around 265 nm (solar-blind) and peaks at 230 nm with a responsivity of approximately 0.0018 A/W. The IR diode response peaks at 1000nm with a responsivity of approximately 0.01 A/W.

Paper Details

Date Published: 16 February 2009
PDF: 9 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161Y (16 February 2009); doi: 10.1117/12.809934
Show Author Affiliations
R. Pillai, Univ. of Houston (United States)
D. Starikov, Univ. of Houston (United States)
Integrated Micro Sensors, Inc. (United States)
C. Boney, Univ. of Houston (United States)
Integrated Micro Sensors, Inc. (United States)
A. Bensaoula, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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