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Proceedings Paper

Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
Author(s): B. L. Liang; P. S. Wong; B. V. G. Dorogan; J. Tatebayashi; A. R. Albrecht; H. Xiang; Yu. I. Mazur; G. J. Salamo; S. R. J. Brueck; D. L. Huffaker
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Paper Abstract

InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-organic chemical-vapor deposition on nano-patterned GaAs pyramids and planar GaAs (001) substrate are comparatively investigated. Photoluminescence (PL), PL excitation, and time-resolved PL measurements demonstrate that the DWELL grown on the GaAs pyramids has a broad QW PL band (FWHM ~ 90 meV) and a better QD emission efficiency than the DWELL structure grown on the planar GaAs (001) substrate. These properties are attributed to the InGaAs QW with distributed thickness profile on the faceted GaAs pyramid, which introduces tapered energy band structure and assists the carrier capture into the QDs. This research provides useful data for further improving the performance of DWELL structures for device applications.

Paper Details

Date Published: 17 February 2009
PDF: 9 pages
Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 722409 (17 February 2009); doi: 10.1117/12.809784
Show Author Affiliations
B. L. Liang, Univ. of California, Los Angeles (United States)
P. S. Wong, Univ. of California, Los Angeles (United States)
B. V. G. Dorogan, Univ. of Arkansas (United States)
J. Tatebayashi, Univ. of California, Los Angeles (United States)
A. R. Albrecht, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
H. Xiang, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Yu. I. Mazur, Univ. of Arkansas (United States)
G. J. Salamo, Univ. of Arkansas (United States)
S. R. J. Brueck, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
D. L. Huffaker, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 7224:
Quantum Dots, Particles, and Nanoclusters VI
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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