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Proceedings Paper

Terahertz imaging with Si MOSFET focal-plane arrays
Author(s): A. Lisauskas; D. Glaab; H. G. Roskos; E. Oejefors; U. R. Pfeiffer
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Paper Abstract

We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-μm CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/√Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.

Paper Details

Date Published: 12 February 2009
PDF: 11 pages
Proc. SPIE 7215, Terahertz Technology and Applications II, 72150J (12 February 2009); doi: 10.1117/12.809552
Show Author Affiliations
A. Lisauskas, Johann Wolfgang Goethe-Univ. Frankfurt am Main (Germany)
D. Glaab, Johann Wolfgang Goethe-Univ. Frankfurt am Main (Germany)
H. G. Roskos, Johann Wolfgang Goethe-Univ. Frankfurt am Main (Germany)
E. Oejefors, Univ. of Wuppertal (Germany)
U. R. Pfeiffer, Univ. of Wuppertal (Germany)

Published in SPIE Proceedings Vol. 7215:
Terahertz Technology and Applications II
Kurt J. Linden; Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)

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