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Proceedings Paper

Modulation response of an injection locked quantum-dash Fabry Perot laser at 1550nm
Author(s): M. Pochet; N. A. Naderi; F. Grillot; N. Terry; V. Kovanis; L. F. Lester
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Paper Abstract

The microwave domain modulation response of an injection-locked laser system is analyzed in the context of a Quantum Dash Fabry-Perot laser. This work demonstrates the applicability of a newly-derived modulation response function by using it to least-squares fit data collected on an injection-locked system with a Quantum-Dash Fabry-Perot semiconductor slave laser. The maximum injection strength, linewidth enhancement factor, coupled phase between the master and slave, and field enhancement factor characterizing the deviation of the locked slave laser from its freerunning value are extracted by least-squares fitting the collected data with the function. The extracted values are then compared with theoretically expected values under the given detuning conditions. The correlation between the frequency of the resonance peak of the modulation response at the positive frequency detuning edge and a pole in the modulation response function under this detuning condition is illustrated. The calculation of the injection strength based on the experimental operating conditions is verified by applying the modulation response function to the experimental data. With the modulation response function, injection-locked behaviors can be accurately simulated in the microwave domain and used to predict operating conditions ideal for high-performance RF links.

Paper Details

Date Published: 24 February 2009
PDF: 9 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721107 (24 February 2009); doi: 10.1117/12.809533
Show Author Affiliations
M. Pochet, The Univ. of New Mexico (United States)
N. A. Naderi, The Univ. of New Mexico (United States)
F. Grillot, The Univ. of New Mexico (United States)
N. Terry, Air Force Research Lab. (United States)
V. Kovanis, Air Force Research Lab. (United States)
L. F. Lester, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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